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| Variable Capacitance Diodes MA2S357 Silicon epitaxial planar type Unit : mm For CATV tuner I Features * Large capacitance ratio * Small series resistance rD * SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.15 min. 0.15 min. 0.27 - 0.02 0.8 0.1 + 0.05 1.3 0.1 1.7 0.1 Parameter Reverse voltage (DC) Peak reverse voltage* Junction temperature Storage temperature Note) * : RL = 10 k Symbol VR VRM Tj Tstg Rating 34 35 150 -55 to +150 Unit V V C C 0.7 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: N I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(0V)*1 CD(2V) CD(25V) CD(10V) CD(17V) Capacitance ratio Diode capacitance deviation Series resistance*2 CD(2V)/CD(25V) C rD CD(2V)(10V)(17V)(25V) CD = 9 pF, f = 470 MHz VR = 30 V VR = 0 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 10 V, f = 1 MHz VR = 17 V, f = 1 MHz 58.0 29.00 2.53 6.40 3.50 11.0 2.0 0.54 34.30 2.92 8.32 4.35 Conditions Min Typ Max 10 Unit nA pF pF pF pF pF % Note) 1 Rated input/output frequency: 470 MHz 2 *1 : Measurement at Low Signal Level *2 : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 - 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25C 0.27 - 0.02 + 0.05 1 MA2S357 CD VR 100 f = 1 MHz Ta = 25C 120 25C Variable Capacitance Diodes IF V F 1.04 CD Ta f = 1 MHz 50 100 1.03 VR = 2 V Diode capacitance CD (pF) 30 20 Forward current IF (mA) CD(Ta) CD(Ta = 25C) 80 Ta = 60C 1.02 10 60 - 40C 1.01 10 V 25 V 17 V 5 3 2 40 1.00 20 0.99 1 0 4 8 12 16 20 24 28 32 36 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.98 0 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperature Ta (C) IR T a 100 VR = 30 V Reverse current IR (nA) 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 |
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